Qualitative behavior of weak solutions of the drift di usion model for semiconductor devices coupled with Maxwell s equations
نویسنده
چکیده
The transient drift di usion model describing the charge transport in semiconductors is con sidered Poisson s equation which is usually used is replaced by Maxwell s equations The di usion and mobility coe cients and the dielectric and magnetic susceptibilities may depend on the space variables Global existence and convergence to the thermal equilibrium is shown
منابع مشابه
Qualitative Behavior of Weak Solutions of the Drift Diiusion Model for Semiconductor Devices Coupled with Maxwell S Equations
The transient drift-diiusion model describing the charge transport in semiconductors is considered. Poisson's equation, which is usually used, is replaced by Maxwell's equations. The diiusion-and mobility-coeecients and the dielectric and magnetic susceptibilities may depend on the space-variables. Global existence and convergence to the thermal equilibrium is shown.
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