Qualitative behavior of weak solutions of the drift di usion model for semiconductor devices coupled with Maxwell s equations

نویسنده

  • F Jochmann
چکیده

The transient drift di usion model describing the charge transport in semiconductors is con sidered Poisson s equation which is usually used is replaced by Maxwell s equations The di usion and mobility coe cients and the dielectric and magnetic susceptibilities may depend on the space variables Global existence and convergence to the thermal equilibrium is shown

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تاریخ انتشار 1996